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EB201 - High Cell Density MOSFET

Features

  • 5.5 A. 3. Largest die available in a DPAK, RΘJC = 3.12°C/W, RΘCA = 50°C/W, Tamb = 85°C, Tboard = 125°C max. 4. Largest die available in a DPAK, RΘJC = 3.12°C/W, RΘCA = 50°C/W, Tamb = 85°C,.

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Datasheet Details

Part number EB201
Manufacturer onsemi
File Size 148.26 KB
Description High Cell Density MOSFET
Datasheet download datasheet EB201 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EB201/D High Cell Density MOSFETs Low On–Resistance Affords New Design Options Prepared by: Kim Gauen and Wayne Chavez ON Semiconductor http://onsemi.com ENGINEERING BULLETIN Just a few years ago an affordable 60 V, 10 mΩ power transistor was a dream. After all, 10 mΩ is the resistance of about 20 cm of #22 gauge wire. Today a sub–10 mΩ power MOSFET is not only available, it is housed in a standard TO–220. Such are the advances that have occurred lately in “high cell density” power MOSFET technology. Furthermore, Motorola’s high cell density technology, HDTMOS®, brings other advantages such as greatly improved body diode performance. The technological advances are sufficiently great that they are fundamentally changing low voltage power transistor technology.
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