FCA20N60 Datasheet - ON Semiconductor

N-Channel MOSFET

FCA20N60 Features

* 650 V @ TJ = 150°C

* Typ. RDS(on) = 150 mW

* Ultra Low Gate Charge (Typ. Qg = 75 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )

* 100% Avalanche Tested

* This Device is Pb

* Free Applications

* Solar Inverter

FCA20N60 General Description

SUPERFET MOSFET is onsemi’s first generation of high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on * resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior s.

FCA20N60 Datasheet (267.06 KB)