FCB260N65S3 Datasheet - ON Semiconductor

N-Channel MOSFET

FCB260N65S3 Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 222 mW

* Ultra Low Gate Charge (Typ. Qg = 24 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

FCB260N65S3 General Description

SUPERFET III MOSFET is ON Semiconductor’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This advance technology is tailored to minimize conduction loss,.

FCB260N65S3 Datasheet (312.39 KB)