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FCB260N65S3 - N-Channel MOSFET

Datasheet Summary

Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 222 mW.
  • Ultra Low Gate Charge (Typ. Qg = 24 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 248 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FCB260N65S3

Datasheet Details

Part number FCB260N65S3
Manufacturer ON Semiconductor
File Size 312.39 KB
Description N-Channel MOSFET
Datasheet download datasheet FCB260N65S3 Datasheet
Additional preview pages of the FCB260N65S3 datasheet.

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Full PDF Text Transcription

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FCB260N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 260 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advance technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for various power system miniaturization and higher efficiency. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 222 mW • Ultra Low Gate Charge (Typ. Qg = 24 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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