FCD260N65S3 datasheet, mosfet equivalent, ON Semiconductor

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FCD260N65S3 Features and benefits

* 700 V @ TJ = 150°C
* Typ. RDS(on) = 222 mW
* Ultra Low Gate Charge (Typ. Qg = 24 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)
*.

FCD260N65S3 Application

* Computing / Display Power Supplies
* Telecom / Server Power Supplies
* Industrial Power Supplies
* Lig.

FCD260N65S3 Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored t.

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