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FCD260N65S3 - N-Channel MOSFET

Description

voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 222 mW.
  • Ultra Low Gate Charge (Typ. Qg = 24 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 248 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FCD260N65S3

Datasheet Details

Part number FCD260N65S3
Manufacturer ON Semiconductor
File Size 411.08 KB
Description N-Channel MOSFET
Datasheet download datasheet FCD260N65S3 Datasheet
Additional preview pages of the FCD260N65S3 datasheet.

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Full PDF Text Transcription

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FCD260N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 260 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 222 mW • Ultra Low Gate Charge (Typ. Qg = 24 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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