FCH125N60E Datasheet - ON Semiconductor

N-Channel MOSFET

FCH125N60E Features

* Typ. RDS(on) = 102 mW

* 650 V @ TJ = 150°C

* Ultra Low Gate Charge (Typ. Qg = 75 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 258 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

FCH125N60E General Description

SUPERFET II MOSFET is ON Semiconductor’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide .

FCH125N60E Datasheet (442.26 KB)