FCP067N65S3 Key Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 59 mW
- Ultra Low Gate Charge (Typ. Qg = 78 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
- 100% Avalanche Tested
- These Devices are Pb-Free and are RoHS pliant
- Part: FCP067N65S3
- Description: Power MOSFET
- Manufacturer: onsemi
- Size: 384.06 KB
Other FCP067N65S3 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FCP067N65S3 | N-Channel MOSFET |