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FCP067N65S3 - Power MOSFET

Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 59 mW.
  • Ultra Low Gate Charge (Typ. Qg = 78 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 715 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FCP067N65S3
Manufacturer ON Semiconductor
File Size 384.06 KB
Description Power MOSFET
Datasheet download datasheet FCP067N65S3 Datasheet
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FCP067N65S3 MOSFET – Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 44 A, 67 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 59 mW • Ultra Low Gate Charge (Typ. Qg = 78 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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