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FCPF260N60E-F154 Datasheet

N-Channel MOSFET

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MOSFET – N-Channel,
SUPERFET) II
600 V, 15 A, 260 mW
FCPF260N60E-F154
Description
SUPERFET II MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SUPERFET II MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
Features
650 V @ TJ = 150°C
Typ. RDS(on) = 220 mW
Ultra Low Gate Charge (Typ. Qg = 48 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 129 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
www.onsemi.com
VDSS
600 V
RDS(ON) MAX
260 mW @ 10 V
ID MAX
15 A
D
G
S
MOSFET
GDS
TO220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
$Y&Z&3&K
FCPF
260N60E
© Semiconductor Components Industries, LLC, 2020
December, 2020 Rev. 0
$Y
&Z
&3
&K
FCPF260N60E
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FCPF260N60EF154/D


  ON Semiconductor Electronic Components Datasheet  

FCPF260N60E-F154 Datasheet

N-Channel MOSFET

No Preview Available !

FCPF260N60EF154
MOSFET MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
600
V
±20
V
±30
ID
IDM
EAS
IAS
EAR
dv/dt
Drain Current
Drain Current
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Continuous (TC = 25°C)
Continuous (TC = 100°C)
Pulsed (Note 1)
15*
9.5*
45*
292.5
3.0
1.56
20
A
A
mJ
A
mJ
V/ns
MOSFET dv/dt
100
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
36
W
0.29
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8from Case for 5 Seconds
55 to +150
°C
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 3 A, VDD = 50 V, RG = 25 W, starting TJ = 25°C.
3. ISD 7.5 A, di/dt 200 A/ms, VDD BVDSS, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
3.5
62.5
Unit
_C/W
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
FCPF260N60EF154
FCPF260N60E
Package
TO220F
(PbFree)
Shipping
50 Units / Tube
www.onsemi.com
2


Part Number FCPF260N60E-F154
Description N-Channel MOSFET
Maker ON Semiconductor
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