FCPF380N60 Datasheet | onsemi

MOSFET - N-Channel, SUPERFET) II 600 V, 10.2 A, 380 m W FCPF380N60-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand- new high voltage super- junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II FAST MOSFET series helps minimize various power systems and improve system efficiency. Features - 650 V @ TJ = 150°C - Typ. RDS(on) = 330 m W - Ultra Low Gate Charge (Typ. Qg = 30 n C) - Low Effective Output Capacitance (Typ. Coss(eff.) = 95 p F) - 100% Avalanche Tested - These Devices are Pb- Free and are Ro HS pliant Applications - puting / Display Power Supplies - Tele / Server Power Supplies - Industrial Power Supplies - Lighting / Charger / Adapter .onsemi. VDSS 600 V RDS(ON) MAX 380 m W @ 10 V ID MAX 10.2 A S MOSFET GDS TO- 220F Ultra Narrow Lead CASE 221BN MARKING DIAGRAM $Y&Z&3&K FCPF 380N60 © Semiconductor ponents Industries, LLC, 2020 December, 2020 - Rev. 0 $Y &Z &3 &K...