FCPF380N60 Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 330 mW
- Ultra Low Gate Charge (Typ. Qg = 30 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF)
- 100% Avalanche Tested
- These Devices are Pb-Free and are RoHS pliant
- Part: FCPF380N60
- Manufacturer: onsemi (official site)
- Size: 188.98 KB
Other FCPF380N60 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild |
FCPF380N60 | N-Channel MOSFET |
Inchange Semiconductor |
FCPF380N60 | N-Channel MOSFET |
|
Fairchild |
FCPF380N60E | N-Channel MOSFET |
FCPF380N60 Description
SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II FAST MOSFET series...