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FCPF600N65S3R0L-F154 Datasheet

N-Channel MOSFET

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MOSFET – Power, N-Channel,
SUPERFET[ III, Easy Drive
650 V, 6 A, 600 mW
FCPF600N65S3R0L-F154
Description
SUPERFET III MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET
Easy drive series helps manage EMI issues and allows for easier
design implementation.
Features
700 V @ TJ = 150°C
Typ. RDS(on) = 474 mW
Ultra Low Gate Charge (Typ. Qg = 11 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Computing / Display Power Supplies
Telecom / Server Power Supply
Industrial Power Supplies
Lighting / Charger / Adapter
www.onsemi.com
VDSS
650 V
RDS(ON) MAX
600 mW @ 10 V
ID MAX
6A
D
G
S
N-Channel MOSFET
GDS
TO220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
© Semiconductor Components Industries, LLC, 2020
December, 2020 Rev. 0
$Y&Z&3&K
FCPF600
N65S3R0
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Numeric Date Code
&K
= Lot Code
FCPF600N65S3R0 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FCPF600N65S3R0LF154/D


  ON Semiconductor Electronic Components Datasheet  

FCPF600N65S3R0L-F154 Datasheet

N-Channel MOSFET

No Preview Available !

FCPF600N65S3R0LF154
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
650
V
±30
V
±30
V
ID
Drain Current
Continuous (TC = 25°C)
6*
Continuous (TC = 100°C)
3.8*
IDM
Drain Current
Pulsed (Note 1)
15*
EAS
Single Pulsed Avalanche Energy (Note 2)
24
IAS
Avalanche Current (Note 2)
1.6
EAR
Repetitive Avalanche Energy (Note 1)
0.24
dv/dt
MOSFET dv/dt
100
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
24
W
0.19
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 s
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 1.6 A, RG = 25 W, starting TJ = 25°C.
3. ISD 3 A, di/dt 200 A/ms, VDD 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCPF600N65S3R0L
5.29
62.5
Unit
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
FCPF600N65S3R0L FCPF600N65S3R0 TO220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 Units
www.onsemi.com
2


Part Number FCPF600N65S3R0L-F154
Description N-Channel MOSFET
Maker ON Semiconductor
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