FCPF650N80Z Datasheet - Fairchild Semiconductor

MOSFET

FCPF650N80Z Features

* RDS(on) = 530 mΩ (Typ.)

* Ultra Low Gate Charge (Typ. Qg = 27 nC)

* Low Eoss (Typ. 2.8 uJ @ 400V)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 124 pF)

* 100% Avalanche Tested

* RoHS Compliant

* ESD Improved Capability Applications D

FCPF650N80Z General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switchi.

FCPF650N80Z Datasheet (655.14 KB)

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FCPF650N80Z

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Fairchild Semiconductor

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655.14 KB

Description:

Mosfet.

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FCPF650N80Z MOSFET Fairchild Semiconductor

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FCPF650N80Z Features

FCPF650N80Z General Description

Datasheet Details

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