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FCPF11N60F - 600V N-Channel MOSFET

Download the FCPF11N60F datasheet PDF. This datasheet also covers the FCP11N60F variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.

Key Features

  • 600 V @ TJ = 150°C.
  • Typ. RDS(on) = 320 mΩ.
  • Fast Recovery Type (trr = 120 ns).
  • Ultra Low Gate Charge (Typ. Qg = 40 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 95 pF).
  • 100% Avalanche Tested.
  • RoHS compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCP11N60F_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET FCPF11N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 11 A, 380 mΩ November 2013 Features • 600 V @ TJ = 150°C • Typ. RDS(on) = 320 mΩ • Fast Recovery Type (trr = 120 ns) • Ultra Low Gate Charge (Typ. Qg = 40 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) • 100% Avalanche Tested • RoHS compliant Applications • LCD/LED/PDP TV • Lighting • Solar Inverter • AC-DC Power Supply Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.