FCPF650N80Z N-Channel MOSFET

INCHANGE

FCPF650N80Z Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCPF650N80Z *.

FCPF650N80Z Features

* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* ESD improved capability
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FCPF650N80Z Applications

* Switching applications
* Load switch
* Power management
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 10 6.3 24 PD Total Dissipat

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Datasheet Details

Part number: FCPF650N80Z
Manufacturer: INCHANGE
File Size: 197.72 KB
Datasheet: FCPF650N80Z-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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