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FDC642P-F085P - P-Channel MOSFET

Download the FDC642P-F085P datasheet PDF. This datasheet also covers the FDC642P-F085 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Typ RDS(on) = 52.5 mW at VGS =.
  • 4.5 V, ID =.
  • 4 A.
  • Typ RDS(on) = 75.3 mW at VGS =.
  • 2.5 V, ID =.
  • 3.2 A.
  • Fast Switching Speed.
  • Low Gate Charge (6.9 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(on).
  • SUPERSOTt.
  • 6 Package: Small Footprint (72% Smaller than Standard SO.
  • 8); Low Profile (1 mm Thick).
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Pb.
  • Free and is RoHS Compli.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDC642P-F085-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FDC642P P-Channel MOSFET Fairchild Semiconductor
FDC642P_F085 P-Channel PowerTrench MOSFET Fairchild Semiconductor
FDC6420C 20V N & P-Channel PowerTrench MOSFETs Fairchild Semiconductor
FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor
FDC640P P-Channel MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDC642P-F085 P-Channel MOSFET
FDC642P P-Channel MOSFET
FDC6420C Dual-Channel MOSFET
FDC6401N Dual N-Channel MOSFET
FDC640P P-Channel MOSFET

Full PDF Text Transcription

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MOSFET – P-Channel, POWERTRENCH) -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features  Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A  Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A  Fast Switching Speed  Low Gate Charge (6.9 nC Typical)  High Performance Trench Technology for Extremely Low RDS(on)  SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick)  AEC−Q101 Qualified and PPAP Capable  This Device is Pb−Free and is RoHS Compliant Applications  Load Switch  Battery Protection  Power management MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current − Continuous (VGS = 4.
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