FDC642P Datasheet | onsemi

Features General Description - Max r DS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A - Max r DS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A - Fast switching speed - Low gate charge (11n C typical) - High performance trench technology for extremely low r DS(on) - Super SOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm thick) - Termination is Lead-free and Ro HS pliant This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor’s advanced Power Trench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical. Applications - Load switch - Battery protection - Power management MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed TA = 25°C Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) ( Note 1a) (Note 1b) Ratings -20 ±8 -4.0 -20 1.6 0.8 -55 to + 150 Units V V A W...