FDMC007N30D
FDMC007N30D is Dual N-Channel MOSFET manufactured by onsemi.
Description
This device includes two specialized N- Channel MOSFETs in a dual Power33 (3mm × 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
Features
Q1: N- Channel
- Max RDS(on) = 11.6 m W at VGS = 10 V, ID = 10 A
- Max RDS(on) = 13.3 m W at VGS = 4.5 V, ID = 9 A
Q1: N- Channel
- Max RDS(on) = 6.4 m W at VGS = 10 V, ID = 16 A
- Max RDS(on) = 7.0 m W at VGS = 4.5 V, ID = 15 A
- Ro HS pliant
Applications
- Mobile puting
- Mobile Internet Devices
- General Purpose Point of Load
MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Q1
Q2
Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage (Note 4) ±12
±12
Drain Current:
- Continuous, TC = 25°C
(Note 6)
- Continuous, TC = 100°C (Note 6)
- Continuous, TA = 25°C (Note 1a)
- Pulsed (Note 5)
(Note 1a) (Note 1b)
EAS Single Pulse Avalanche Energy (Note 3)
54 m...
