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FDMC008N08C Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 80 V, 60 A, 7.

General Description

This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 7.8 mW at VGS = 10 V, ID = 21 A.
  • Max RDS(on) = 19.3 mW at VGS = 6 V, ID = 10 A.
  • 50% Lower Qrr Than Other MOSFET Suppliers.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL tested.
  • Pb.
  • Free, Halide Free and RoHS Compliant.

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