FDMC3612 Key Features
- Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A
- Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A
- Low Profile
- 1 mm Max in Power 33
- 100% UIL Tested
- These Devices are Pb-Free and are RoHS pliant
- Part: FDMC3612
- Description: N-Channel MOSFET
- Manufacturer: onsemi
- Size: 564.78 KB
Other FDMC3612 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Kexin Semiconductor |
FDMC3612 | N-Channel MOSFET |
Fairchild Semiconductor |
FDMC3612 | N-Channel Power Trench MOSFET |