900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

FDMC3612 Datasheet

N-Channel MOSFET

No Preview Available !

MOSFET – N-Channel,
POWERTRENCH)
100 V, 12 A, 110 mW
FDMC3612, FDMC3612-L701
General Description
This NChannel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been especially tailored
to minimize the onstate resistance and yet maintain superior
switching performance.
Features
Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A
Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A
Low Profile 1 mm Max in Power 33
100% UIL Tested
These Devices are PbFree and are RoHS Compliant
Applications
DC DC Conversion
PSE Switch
www.onsemi.com
8765
SSSG
1234
DDDD
Top
Bottom
WDFN8 3.3x3.3, 0.65P
CASE 511DR
FDMC3612
SS SG
DDDD
Top
Bottom
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
FDMC3612L701
MARKING DIAGRAM
ON AXYKK
FDMC
3612
FDMC
3612
ALYW
FDMC3612
FDMC3612L701
FDMC3612 = Specific Device Code
A
= Assembly Location
XY
= 2Digit Date Code
KK
= 2Digit Lot Run Traceability Code
L
= Wafer Lot Number
YW
= Assembly Start Week
PIN ASSIGNMENT
D5
4 G G1
8D
D6
3 S S2
7D
D7
2 S S3
6D
D8
1 S S4
5D
FDMC3612
FDMC3612L701
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
February, 2020 Rev. 4
Publication Order Number:
FDMC3612/D


  ON Semiconductor Electronic Components Datasheet  

FDMC3612 Datasheet

N-Channel MOSFET

No Preview Available !

FDMC3612, FDMC3612L701
MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current
ID
Continuous (Package limited)
Continuous (Silicon limited)
Continuous (Note 1a)
Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
100
V
±20
V
16
A
12
3.3
15
EAS Single Pulse Avalanche Energy (Note 2)
32
mJ
PD
Power Dissipation
TC = 25°C
35
W
Power Dissipation (Note 1a)
TA = 25°C
2.3
TJ, TSTG Operating and Storage Junction Temperature Range
55 to + 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Rating
Unit
RqJC Thermal Resistance, Junction to Case
3.5
°C/W
RqJA Thermal Resistance, Junction to Ambient (Note 1a)
53
1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR4 material. RqJC is guaranteed
by design while RqCA is determined by the user’s board design.
a. 53°C/W when mounted on a 1 in2 pad
of 2 oz copper
b. 125°C/W when mounted on a minimum
pad of 2 oz copper
2. Starting TJ = 25°C; Nch: L = 1 mH, IAS = 8 A, VDD = 90 V, VGS = 10 V.
www.onsemi.com
2


Part Number FDMC3612
Description N-Channel MOSFET
Maker ON Semiconductor
PDF Download

FDMC3612 Datasheet PDF






Similar Datasheet

1 FDMC3612 N-Channel MOSFET
Kexin
2 FDMC3612 N-Channel Power Trench MOSFET
Fairchild Semiconductor
3 FDMC3612 N-Channel MOSFET
ON Semiconductor
4 FDMC3612-L701 N-Channel MOSFET
ON Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy