FDMC4D9P20X8 Description
This P−Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
FDMC4D9P20X8 Key Features
- Max rDS(on) = 4.9 mW at VGS = -4.5 V, ID = -18 A
- Max rDS(on) = 16.4 mW at VGS = -1.8 V, ID = -9 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS