FDMC4D9P20X8
FDMC4D9P20X8 is P-Channel Power MOSFET manufactured by onsemi.
Description
This P- Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process that has been optimized for r DS(on), switching performance and ruggedness.
Features
- Max r DS(on) = 4.9 m W at VGS =
- 4.5 V, ID =
- 18 A
- Max r DS(on) = 16.4 m W at VGS =
- 1.8 V, ID =
- 9 A
- High Performance Trench Technology for Extremely Low r DS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
Applications
- Load Switch
- Battery Management
- Power Management
- Reverse Polarity Protection
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings
Units
Drain to Source Voltage
- 20
Gate to Source Voltage
±12
Drain Current:
Continuous, TC = 25°C (Note 5)
- 75
Continuous, TC = 100°C (Note 5)
- 47
Continuous, TA = 25°C (Note 1a)
-...
