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FDMC4D9P20X8 - P-Channel Power MOSFET

Description

This P

advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.

Features

  • Max rDS(on) = 4.9 mW at VGS =.
  • 4.5 V, ID =.
  • 18 A.
  • Max rDS(on) = 16.4 mW at VGS =.
  • 1.8 V, ID =.
  • 9 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FDMC4D9P20X8

Datasheet Details

Part number FDMC4D9P20X8
Manufacturer ON Semiconductor
File Size 375.43 KB
Description P-Channel Power MOSFET
Datasheet download datasheet FDMC4D9P20X8 Datasheet
Additional preview pages of the FDMC4D9P20X8 datasheet.

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Full PDF Text Transcription

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FDMC4D9P20X8 P‐Channel Power Trench) MOSFET −20 V, −75 A, 4.9 mW General Description This P−Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness. Features • Max rDS(on) = 4.9 mW at VGS = −4.5 V, ID = −18 A • Max rDS(on) = 16.4 mW at VGS = −1.
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