FDMC8010 Datasheet - ON Semiconductor

N-Channel MOSFET

FDMC8010 Features

* Max RDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A

* Max RDS(on) = 1.8 mW at VGS = 4.5 V, ID = 25 A

* High Performance Technology for Extremely Low RDS(on)

* These Devices are Pb

* Free and are RoHS Compliant Applications

* DC

* DC Buck Converters

FDMC8010 General Description

This N *Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance. This device is well suited for applications where ultra low RDS(on) is required in small spaces such as High performance VRM, POL and O.

FDMC8010 Datasheet (544.42 KB)