FDMC86102LZ Datasheet - ON Semiconductor

N-Channel MOSFET

FDMC86102LZ Features

* Shielded Gate MOSFET Technology

* Max RDS(on) = 24 mW at VGS = 10 V, ID = 6.5 A

* Max RDS(on) = 35 mW at VGS = 4.5 V, ID = 5.5 A

* HBM ESD Protection Level > 6 kV Typical (Note 4)

* 100% UIL Tested

* RoHS Compliant Applications

* DC

* D

FDMC86102LZ General Description

This N *Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on *state resistance and yet maintain superior switching performance. G *S zener has been added to enh.

FDMC86102LZ Datasheet (259.92 KB)