Datasheet Summary
MOSFET
- N-Channel, Shielded Gate, POWERTRENCH)
100 V, 24 mW , 22 A
Description This N- Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance and yet maintain superior switching performance. G- S zener has been added to enhance ESD voltage level.
Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 24 mW at VGS = 10 V, ID = 6.5 A
- Max RDS(on) = 35 mW at VGS = 4.5 V, ID = 5.5 A
- HBM ESD Protection Level > 6 kV Typical (Note 4)
- 100% UIL Tested
- RoHS pliant
Applications
- DC- DC Switching
MAXIMUM RATINGS (TA = 25°C unless otherwise...
