| Description | This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance. Features • Max rDS(on) = 307 mW at VGS = −10 V, ID = −2 A • Max rDS(on) = 356 mW at VGS = −6 V, ID = −1.8 A • Very Low rDS(on) Mid Voltage P−Channel Silicon Technology Optimised for ... |
| Features |
• Max rDS(on) = 307 mW at VGS = −10 V, ID = −2 A • Max rDS(on) = 356 mW at VGS = −6 V, ID = −1.8 A • Very Low rDS(on) Mid Voltage P−Channel Silicon Technology Optimised for Low Qg • Optimised for Fast Switching Applications as Well as Load Switch Applications • 100% UIL Tested • This Device is Pb−Free, Halide Free and is ROHS Compliant Applications... |
| Datasheet |
 FDMC86262P Datasheet 190.46KB |
