FDMC86262P Datasheet - ON Semiconductor

P-Channel MOSFET

* Max rDS(on) = 307 mW at VGS =

* 10 V, ID =

* 2 A

* Max rDS(on) = 356 mW at VGS =

* 6 V, ID =

* 1.8 A

* Very Low rDS(on) Mid Voltage P

* Channel Silicon Technology Optimised for Low Qg

* Optimised for Fast Switching Applications as W

FDMC86262P

190.46 KB

P-channel mosfet.

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FDMC86262P P-Channel MOSFET ON Semiconductor

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