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FDMC86520DC - N-Channel MOSFET

Description

This N

POWERTRENCH process.

to Ambient

Features

  • DUAL COOL Top Side Cooling PQFN Package.
  • Max rDS(on) = 6.3 mW at VGS = 10 V, ID = 17 A.
  • Max rDS(on) = 8.7 mW at VGS = 8 V, ID = 14,5 A.
  • High Performance Technology for Extremely Low rDS(on).
  • This Device is Pb.
  • Free, Halide Free and RoHS Compliant.

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Datasheet preview – FDMC86520DC

Datasheet Details

Part number FDMC86520DC
Manufacturer ON Semiconductor
File Size 383.57 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC86520DC Datasheet
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Full PDF Text Transcription

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MOSFET – N-Channel, DUAL COOL) 33, POWERTRENCH) 60 V, 40 A, 6.3 mW FDMC86520DC General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features • DUAL COOL Top Side Cooling PQFN Package • Max rDS(on) = 6.3 mW at VGS = 10 V, ID = 17 A • Max rDS(on) = 8.
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