FDMS003N08C Datasheet - ON Semiconductor

N-Channel MOSFET

FDMS003N08C Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 56 A

* Max rDS(on) = 8.1 mΩ at VGS = 6 V, ID = 28 A

* 50% lower Qrr than other MOSFET suppliers

* Lowers switching noise/EMI

* MSL1 robust package design

* 100% UIL te

FDMS003N08C General Description

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. Applications

FDMS003N08C Datasheet (1.35 MB)

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Datasheet Details

Part number:

FDMS003N08C

Manufacturer:

ON Semiconductor ↗

File Size:

1.35 MB

Description:

N-channel mosfet.
FDMS003N08C N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDMS003N08C N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 147 A, 3.1 mΩ .

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FDMS003N08C N-Channel MOSFET ON Semiconductor

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FDMS003N08C Features

FDMS003N08C General Description

Datasheet Details

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Description:

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