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FDMS003N08C Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: FDMS003N08C N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDMS003N08C N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 147 A, 3.

General Description

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Applications „ Primary DC-DC MOSFET „ Synchronous Rectifier in DC-DC and AC-DC „ Motor Drive „ Solar Top Bottom S Pin 1 S D Pin 1 S S G S D D D D D S D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 5) (Note 5) (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings 80 ±20 147 92 22 658 486 125 2.7 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking FDMS003N08C Device FDMS003N08C Package Power 56 1 (Note 1a) 45 °C/W Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units Semiconductor Components Industries, LLC, 2017 May, 2017, Rev.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 56 A.
  • Max rDS(on) = 8.1 mΩ at VGS = 6 V, ID = 28 A.
  • 50% lower Qrr than other MOSFET suppliers.
  • Lowers switching noise/EMI.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant General.

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