FDP5500-F085 Datasheet | onsemi

Features - Typ r DS(on) = 5.1mΩ at VGS = 10V, ID = 80A - Typ Qg(10) = 114n C at VGS = 10V - Simulation Models -Temperature pensated PSPICE and SABERTM Models - Peak Current vs Pulse Width Curve - UIS Rating Curve - Qualified to AEC Q101 - Ro HS pliant Applications - DC Linear Mode Control - Solenoid and Motor Control - Switching Regulators - Automotive Systems Package DRAIN (FLANGE) TO-220AB SOURCE DRAIN GATE ©2009 Semiconductor ponents Industries, LLC. September-2017, Rev. 1 Symbol Publication Order Number: FDP5500-F085/D FDP5500-F085 N-Channel Ultra FET Power MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VDGR VGS Drain to Source Voltage Drain to Gate Voltage (RGS = 20kΩ) Gate to Source Voltage Drain Current Continuous (TC < 135o C, VGS = 10V) Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25o C TJ, TSTG Operating and Storage Temperature Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec) Tpkg Max. Package Temp. for Soldering (Package Body for...