* 7.6 A, 80 V:
RDS(ON) = 0.029 W @ VGS = 10 V RDS(ON) = 0.033 W @ VGS = 6 V
* Low Gate Charge (34 nC Typical)
* Fast Switching Speed
* High Performanc.
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC−DC converters using either
synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge
than other MOS.
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