FDS4935BZ Datasheet | onsemi

Dual 30 Volt P-Channel Power Trench“ MOSFET General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. x - 6.9 A, - 30 V. RDS(ON) = 22 m: @ VGS = - 10 V RDS(ON) = 35 m: @ VGS = - 4.5 V x Extended VGSS range (- 25V) for battery applications These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. x ESD protection diode (note 3) x High performance trench technology for extremely low RDS(ON) x High power and current handling capability DD1 DD1 DD2 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1...