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FDS6673BZ Datasheet - ON Semiconductor

P-Channel MOSFET

FDS6673BZ Features

* Max RDS(on) = 7.8 mW @ VGS =

* 10 V, ID =

* 14.5 A

* Max RDS(on) = 12 mW @ VGS =

* 4.5 V, ID =

* 12 A

* Extended VGS Range (

* 25 V) for Battery Applications

* HBM ESD Protection Level of 6.5 kV Typical (Note 3)

* High Perfo

FDS6673BZ General Description

This P *Channel MOSFET is produced using onsemi’s advanced Power Trench process that has been especially tailored to minimize the on *state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Pack.

FDS6673BZ Datasheet (282.02 KB)

Preview of FDS6673BZ PDF

Datasheet Details

Part number:

FDS6673BZ

Manufacturer:

ON Semiconductor ↗

File Size:

282.02 KB

Description:

P-channel mosfet.

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FDS6673BZ P-Channel MOSFET ON Semiconductor

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