FDS6673BZ
FDS6673BZ is P-Channel MOSFET manufactured by onsemi.
Description
This P- Channel MOSFET is produced using onsemi’s advanced
Power Trench process that has been especially tailored to minimize the on- state resistance.
This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- Max RDS(on) = 7.8 m W @ VGS =
- 10 V, ID =
- 14.5 A
- Max RDS(on) = 12 m W @ VGS =
- 4.5 V, ID =
- 12 A
- Extended VGS Range (- 25 V) for Battery Applications
- HBM ESD Protection Level of 6.5 k V Typical (Note 3)
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- Pb- Free, Halide Free and Ro HS pliant
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current
- Continuous (Note 1a)
- Pulsed
- 30
±25
- 14.5
- 75
Maximum Power dissipation
(Note 1a)
(Note 1b)
(Note 1c)
W 2.5 1.2 1.0
TJ, TSTG Operating and Storage Junction Temperature...
