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FDS6673BZ Datasheet P-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – P-Channel, POWERTRENCH) -30 V, -14.5 A, 7.8 mW FDS6673BZ.

General Description

This P−Channel MOSFET is produced using onsemi’s advanced Power Trench process that has been especially tailored to minimize the on−state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Key Features

  • Max RDS(on) = 7.8 mW @ VGS =.
  • 10 V, ID =.
  • 14.5 A.
  • Max RDS(on) = 12 mW @ VGS =.
  • 4.5 V, ID =.
  • 12 A.
  • Extended VGS Range (.
  • 25 V) for Battery.

Similar Datasheet

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Fairchild Semiconductor Logo FDS6673BZ_F085 P-Channel PowerTrench MOSFET Fairchild Semiconductor
Fairchild Semiconductor Logo FDS6673AZ P-Channel MOSFET Fairchild Semiconductor

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FDS6673BZ Distributor