FDS6680A Datasheet - ON Semiconductor

N-Channel MOSFET

FDS6680A Features

* 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V

* Ultra-low gate charge

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 5 4 6 3 7 2

FDS6680A General Description

This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications w.

FDS6680A Datasheet (255.83 KB)