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  ON Semiconductor Electronic Components Datasheet  

FDS6930A Datasheet

Dual N-Channel MOSFET

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FDS6930A
Dual N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
These N-Channel Logic Level MOSFETs are
produced using ON Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.
Features
5.5 A, 30 V. RDS(ON) = 0.040 @ VGS = 10 V
RDS(ON) = 0.055 @ VGS = 4.5 V.
Fast switching speed.
Low gate charge (typical 5 nC).
High performance trench technology for extremely low
RDS(ON).
High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
D2
D2
D1
D1
F6D9S30A
SO-8
G2
S2
pin 1
G1
S1
SO-8
SOT-223
5
6
7
8
SOIC-16
4
3
2
1
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD
Power Dissipation for Dual Operation
(Note 1)
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Semiconductor Components Industries, LLC.
October-2017, Rev. 4
FDS6930A
30
±20
5.5
20
2
1.6
1
0.9
-55 to 150
78
40
Units
V
V
A
W
W
°C
°C/W
°C/W
Publication Order Number:
FDS6930A/D


  ON Semiconductor Electronic Components Datasheet  

FDS6930A Datasheet

Dual N-Channel MOSFET

No Preview Available !

Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter
Conditions
OFF CHARACTERISTICS
Min Typ Max Units
BVDSS
BVDSS/TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS = 0 V, I D = 250 µA
ID = 250 µA, Referenced to 25 oC
VDS = 24 V, VGS = 0 V
TJ = 55°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
30
V
20 mV/oC
1 µA
10 µA
100 nA
-100 nA
VGS(th)
VGS(th)/TJ
RDS(ON)
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
ID(ON) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
1 1.5
-4
3V
mV/ oC
VGS = 10 V, ID = 5.5 A
0.032 0.04
TJ =125°C
0.048 0.068
VGS = 4.5 V, ID = 4.8 A
0.044 0.055
VGS = 10 V, VDS = 5 V
20
VDS = 15 V, ID = 5.5 A
12
A
S
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
460 pF
115 pF
45 pF
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
VDS = 15 V, ID = 1 A
VGS = 10 V , RGEN = 6
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
VDS = 5 V, ID = 5.5 A,
Qgs Gate-Source Charge
VGS = 5 V
Qgd Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
5 11 ns
8 17 ns
17 28 ns
13 24 ns
5 7 nC
2 nC
0.9 nC
IS Maximum Continuous Drain-Source Diode Forward Current
1.3 A
VSD
Notes:
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.3 A (Note 2)
1.2 V
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
b. 125OC/W on a 0.02 in2
pad of 2oz copper.
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
www.onsemi.com
2


Part Number FDS6930A
Description Dual N-Channel MOSFET
Maker ON Semiconductor
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FDS6930A Datasheet PDF






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