FDS86242 datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

General Description
* Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A
* Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A
* High performance trench technology for .

Application

* DC/DC converters and Off-Line UPS
* Distributed Power Architectures and VRMs
* RoHS Compliant
* Prim.

Description

* Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A
* Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A
* High performance trench technology for extremely low rDS(on) This N -Channel MOSFET is produ ced using ON Semiconductor‘s advanced Power T .

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