FDS86242 Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.
FDS86242 Key Features
- Max rDS(on) = 67 mW at VGS = 10 V, ID = 4.1 A
- Max rDS(on) = 98 mW at VGS = 6 V, ID = 3.3 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
- 100% UIL Tested
- ESD Protection Level: HBM > 500 V, CDM > 2 kV
- This Device is Pb-Free, Halide Free and is RoHS pliant