Datasheet Details
| Part number | FDS86242 |
|---|---|
| Manufacturer | ON Semiconductor ↗ |
| File Size | 382.92 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 FDS86242-ONSemiconductor.pdf
|
| Part number | FDS86242 |
|---|---|
| Manufacturer | ON Semiconductor ↗ |
| File Size | 382.92 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
FDS86242-ONSemiconductor.pdf
|
Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A High performance trench technology for extremely low rDS(on) This N -Channel MOSFET is produ ced using ON Semiconductor‘s advanced Power T rench® process that has been optimized for rDS(on), switching per formance and ruggedness. High power and current handling capability in a widely used surface mount package 100% UIL Tested Applications DC/D
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