Datasheet4U Logo Datasheet4U.com

FDS86240 - N-Channel MOSFET

General Description

Shielded Gate MOSFET Technology Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Sur

Key Features

  • General.

📥 Download Datasheet

Datasheet Details

Part number FDS86240
Manufacturer onsemi
File Size 328.85 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS86240 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS86240 MOSFET Fairchild Semiconductor
FDS86242 N-Channel PowerTrench MOSFET Fairchild Semiconductor
FDS86252 MOSFET Fairchild Semiconductor
FDS86106 MOSFET Fairchild Semiconductor
FDS86140 MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDS86242 150V 4.1A N-Channel MOSFET
FDS86141 N-Channel MOSFET
FDS8672S N-Channel MOSFET
FDS8433A P-Channel MOSFET
FDS8449 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDS86240 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 7.5 A, 19.8 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A „ Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A „ High Performance Trench Technology for Extremely Low rDS(on) „ High Power and Current Handling Capability in a Widely Used Surface Mount Package „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.