Datasheet Summary
FDS8958B Dual N & P-Channel PowerTrench® MOSFET
Dual N & P-Channel PowerTrench® MOSFET
Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Features
Q1: N-Channel
- Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A
- Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A
Q2: P-Channel
- Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A
- Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A
- HBM ESD protection level > 3.5 kV (Note 3)
- RoHS pliant
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce...
