FDS8958B
Features
Q1: N-Channel
- Max r DS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A
- Max r DS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A
Q2: P-Channel
- Max r DS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A
- Max r DS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A
- HBM ESD protection level > 3.5 k V (Note 3)
- Ro HS pliant
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's advanced Power Trench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching performance.
These devices are well suite d for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Application
- DC-DC Conversion
- BLU and motor drive inverter
D2 D2 D1 D1
Pin 1
G2 S2 G1 S1
Q2
D2 5
D2 6
Q1
D1 7 D1 8
4 G2 3 S2 2 G1 1 S1
SO-8
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol VDS VGS ID
EAS TJ, TSTG
Parameter Drain to Source Voltage Gate...
