FDS8958B - Dual N & P-Channel Power MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDS8958B
Manufacturer	ON Semiconductor
File Size	698.92 KB
Description	Dual N & P-Channel Power MOSFET
Datasheet	FDS8958B-ONSemiconductor.pdf

FDS8958B Product details

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching performance. DC-DC Conversion BLU and motor drive inverter D2 D2 D1 D1 Pin 1

Features

Q1: N-Channel.
Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A.
Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel.
Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A.
Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A.
HBM ESD protection level > 3.5 kV (Note 3).
RoHS Compliant General.

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Published: Jan 23, 2023 |