FDS8958B Datasheet - ON Semiconductor

Dual N & P-Channel Power MOSFET

FDS8958B Features

* Q1: N-Channel

* Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A

* Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel

* Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A

* Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A

* HBM ESD protection level > 3.5 k

FDS8958B General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching performance. These devices are well suite d for low .

FDS8958B Datasheet (698.92 KB)

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FDS8958B

Manufacturer:

ON Semiconductor ↗

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698.92 KB

Description:

Dual n & p-channel power mosfet.
FDS8958B Dual N & P-Channel PowerTrench® MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V,.

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FDS8958B Dual P-Channel Power MOSFET ON Semiconductor

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FDS8958B Features

FDS8958B General Description

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