FDT86246 - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDT86246
Manufacturer	ON Semiconductor
File Size	243.98 KB
Description	N-Channel MOSFET
Datasheet	FDT86246 Datasheet
Additional preview pages of the FDT86246 datasheet.

Product details

Description

This N Channel MOSFET is produced using Fairchild onsemi advanced PowerTrench® Process that has been optimized for RDS(on), switching performance and ruggedness.

Features

Max RDS(on) = 236 mW at VGS = 10 V, ID = 2 A.
Max RDS(on) = 329 mW at VGS = 6 V, ID = 1.7 A.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
These Devices are Pb.
Free and are RoHS Compliant Typical.

📁 Similar Datasheet

FDT86246L - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDT86244 - MOSFET (Fairchild Semiconductor)
FDT86256 - MOSFET (Fairchild Semiconductor)
FDT86102LZ - MOSFET (Fairchild Semiconductor)
FDT86106LZ - MOSFET (Fairchild Semiconductor)
FDT86113LZ - MOSFET (Fairchild Semiconductor)
FDT1600N10ALZ - MOSFET (Fairchild Semiconductor)
FDT3612 - 100V N-Channel PowerTrench MOSFET (Fairchild Semiconductor)

Other Datasheets by ON Semiconductor

FDT434P - P-Channel MOSFET
FDT439N - N-Channel MOSFET
FDT457N - N-Channel MOSFET
FDT4N50NZU - N-Channel MOSFET

Published: Dec 25, 2023 |