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FDT86246 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel Shielded Gate POWERTRENCH) 150 V, 2 A, 236.

General Description

This N−Channel MOSFET is produced using Fairchild onsemi advanced PowerTrench® Process that has been optimized for RDS(on), switching performance and ruggedness.

Key Features

  • Max RDS(on) = 236 mW at VGS = 10 V, ID = 2 A.
  • Max RDS(on) = 329 mW at VGS = 6 V, ID = 1.7 A.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant Typical.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDT86246 MOSFET Fairchild Semiconductor
Fairchild Semiconductor Logo FDT86246L N-Channel PowerTrench MOSFET Fairchild Semiconductor

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FDT86246 Distributor