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FFSB0665A Datasheet Sic Schottky Diode

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D1,.

General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.

System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Key Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 36 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery/No Forward Recovery.
  • This Device is Pb.
  • Free, Halogen Free/BFR Free and RoHS Compliant.

FFSB0665A Distributor