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FFSM0665A Datasheet

Silicon Carbide Schottky Diode

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FFSM0665A
Silicon Carbide Schottky
Diode
650 V, 6 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
Max Junction Temperature 175°C
Avalanche Rated 20 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
Applications
General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuits
www.onsemi.com
5. Cathode 3, 4. Anode
Schottky Diode
Pin1
5
4 321
PQFN 8y8, 2P
CASE 483AP
MARKING DIAGRAM
$Y&Z&3&K
FFSM
0665A
$Y
&Z
&3
&K
FFSM0665A
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
August, 2019 Rev. 3
1
Publication Order Number:
FFSM0665A/D


  ON Semiconductor Electronic Components Datasheet  

FFSM0665A Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

FFSM0665A
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
650 V
EAS Single Pulse Avalanche Energy
(Note 1)
20
mJ
IF Continuous Rectified Forward Current @ TC < 150°C
6A
Continuous Rectified Forward Current @ TC < 135°C
8
IF, Max
Non-Repetitive Peak Forward Surge Current
TC = 25°C, 10 ms
430 A
TC = 150°C, 10 ms
415 A
IF,SM
Non-Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
42
A
IF,RM
Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
20
A
Ptot Power Dissipation
TC = 25°C
56 W
TC = 150°C
9.4 W
TJ, TSTG
Operating and Storage Temperature Range
55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 20 mJ is based on starting TJ = 25°C, L = 1 mH, IAS = 9 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max
Value
2.67
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min Typ Max Unit
VF Forward Voltage
IF = 6 A, TC = 25°C
1.50 1.75 V
IF = 6 A, TC = 125°C
1.6 2.0
IF = 6 A, TC = 175°C
1.72 2.4
IR Reverse Current
VR = 650 V, TC = 25°C − − 200 mA
VR = 650 V, TC = 125°C
400
VR = 650 V, TC = 175°C
600
QC
Total Capacitive Charge
V = 400 V
22 nC
C Total Capacitance
VR = 1 V, f = 100 kHz
365
pF
VR = 400 V, f = 100 kHz
40
VR = 800 V, f = 100 kHz
31
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
FFSM0665A
FFSM0665A
PQFN 8x8, 2P
(PbFree/Halogen Free)
3000Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2


Part Number FFSM0665A
Description Silicon Carbide Schottky Diode
Maker ON Semiconductor
Total Page 7 Pages
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