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FFSM1265A Silicon Carbide Schottky Diode

FFSM1265A Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 12 A, 650 V, D1, Power88 FFSM1265A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

FFSM1265A Features

* Max Junction Temperature 175°C
* Avalanche Rated 79 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* This Device is Pb
* Free, Halogen Free/BFR Free an

FFSM1265A Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits DATA SHEET www. onsemi. com 5 Cathode 3, 4 Anode 1, 2 Floating Schottky Diode Pin 1 b 5 4 3 21 PQFN4 8X8, 2P (Power88) CASE 483AP MARKING DIAGRAM AXYYKK FFSM 1265A A XYY KK FFSM1265A = Assembly Pla

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Silicon Carbide Schottky Diode ON Semiconductor
ON Semiconductor FFSM1265A-like datasheet