Part FGH75T65SHDT
Description IGBT
Manufacturer onsemi
Size 2.14 MB
onsemi
FGH75T65SHDT

Overview

  • Maximum Junction Temperature: TJ =175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.6 V(Typ.) @ IC = 75 A
  • 100% of the Parts Tested for ILM (Note 1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • This Device is Pb-Free and is RoHS Compliant