FGH75T65SHDT
FGH75T65SHDT is IGBT manufactured by onsemi.
Description
Using novel field stop IGBT technology, onsemi’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, tele, ESS and PFC applications where low conduction and switching losses are essential.
Features
- Maximum Junction Temperature: TJ =175°C
- Positive Temperature Co- efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.6 V(Typ.) @ IC = 75 A
- 100% of the Parts Tested for ILM (Note 1)
- High Input Impedance
- Fast Switching
- Tighten Parameter Distribution
- This Device is Pb- Free and is Ro HS pliant
Applications
- Solar Inverter, UPS, Welder, Tele, ESS, PFC
DATA SHEET .onsemi.
EC G
TO- 247- 3LD CASE 340CH MARKING DIAGRAMS
$Y&Z&3&K FGH75T65 SHDT
$Y &Z &3 &K FGH75T65SHDT
= onsemi Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor ponents Industries, LLC, 2015
Spetember, 2021
- Rev. 4
Publication Order Number: FGH75T65SHDT/D
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
Parameter
Symbol FGH75T65SHDT- F155
Unit
Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage
VCES
VGES
±20
±30
Collector...
