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FGH75T65SHDT Datasheet IGBT

Manufacturer: onsemi

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General Description

Using novel field stop IGBT technology, onsemi’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Overview

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SHDT.

Key Features

  • Maximum Junction Temperature: TJ =175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.6 V(Typ. ) @ IC = 75 A.
  • 100% of the Parts Tested for ILM (Note 1).
  • High Input Impedance.
  • Fast Switching.
  • Tighten Parameter Distribution.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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