FGH75T65SHDTL4
Overview
FGH75T65SHDTL4 Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage 650 V ±20 V ±30 V IC Collector Current TC = 25°C 150 A TC = 100°C 75 A ILM (Note 1) Pulsed Collector Current TC = 25°C 300 A ICM (Note 2) Pulsed Collector Current 300 A IF Diode Forward Current TC = 25°C 125 A Diode Forward Current TC = 100°C 75 A IFM(Note 2) Pulsed Diode Maximum Forward Current 300 A PD Maximum Power Dissipation TC = 25°C 455 W TC = 100°C 227 W TJ Operating Junction Temperature -55 to +175 °C TSTG Storage Temperature R.
- Maximum Junction Temperature: TJ =175°C
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A
- 100% of the Parts Tested for ILM
- High Input Impedance
- Fast Switching
- Tighten Parameter Distribution
- This Device is Pb-Free and is RoHS Compliant
- Do Not Recommend for Reflow and Full PKG Dipping
