Part FGH75T65SQD
Description IGBT
Manufacturer onsemi
Size 526.93 KB
onsemi
FGH75T65SQD

Overview

  • Maximum Junction Temperature : TJ =175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A
  • 100% of the Parts Tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • These Devices are Pb-Free and are RoHS Compliant