FGH75T65SHDT Description
Using novel field stop IGBT technology, onsemi’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, tele, ESS and PFC applications where low conduction and switching losses are essential.
FGH75T65SHDT Key Features
- Maximum Junction Temperature: TJ =175°C
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.6 V(Typ.) @ IC = 75 A
- 100% of the Parts Tested for ILM (Note 1)
- High Input Impedance
- Fast Switching
- Tighten Parameter Distribution
- This Device is Pb-Free and is RoHS pliant