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FGH75T65SHDTLN4 - IGBT

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ. ) @ IC = 75 A.
  • 100% of the Parts Tested for ILM(1).
  • High Input Impedance.
  • Fast Switching.
  • Tight Parameter Distribution.
  • Pb Free and RoHS Compliant.
  • Not Recommended for Reflow and Full PKG Dipping Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT - Field Stop, Trench 650 V, 75 A Product Preview FGH75T65SHDTLN4 Using the novel field stop 3rd generation IGBT technology, FGH75T65SHDTLN4 offers the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction loss and switching loss are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.