Part FGH75T65SHDTLN4
Description IGBT
Manufacturer onsemi
Size 459.79 KB
onsemi
FGH75T65SHDTLN4

Overview

  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A
  • 100% of the Parts Tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tight Parameter Distribution
  • Pb Free and RoHS Compliant
  • Not Recommended for Reflow and Full PKG Dipping