FGH75T65SQDTL4
Overview
FGH75T65SQDTL4 Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage 650 V ±20 V ±30 V IC Collector Current TC = 25°C 150 A TC = 100°C 75 A ILM (Note 1) Pulsed Collector Current TC = 25°C 300 A ICM (Note 2) Pulsed Collector Current 300 A IF Diode Forward Current TC = 25°C 125 A Diode Forward Current TC = 100°C 75 A IFM Pulsed Diode Maximum Forward Current 300 A PD Maximum Power Dissipation TC = 25°C 375 W TC = 100°C 188 W TJ Operating Junction Temperature -55 to +175 °C TSTG Storage Temperature Range -55 to +175 °C TL Maximum Lead Tem.
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 75 A
- 100% of the Parts Tested for ILM
- High Input Impedance
- Fast Switching
- Tighten Parameter Distribution
- This Device is Pb-Free and is RoHS Compliant
