FGH75T65SHDTLN4
FGH75T65SHDTLN4 is IGBT manufactured by onsemi.
Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co- efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A
- 100% of the Parts Tested for ILM(1)
- High Input Impedance
- Fast Switching
- Tight Parameter Distribution
- Pb Free and Ro HS pliant
- Not Remended for Reflow and Full PKG Dipping
Typical Applications
- Solar Inverter
- UPS
- Welder
- Tele
- ESS
- PFC
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector- to- Emitter Voltage
Gate- to- Emitter Voltage Transient Gate- to- Emitter Voltage
VCES
VGES
±20
±30
Collector Current
TC = 25°C
TC = 100°C
Pulsed Collector Current (Note 1)
Pulsed Collector Maximum Current (Note 2)
Diode Forward Current
TC =...
