* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A
* 100% of the Parts Tested for ILM(1)
* High Inpu
FGH75T65SHDTLN4 Datasheet (459.79 KB)
FGH75T65SHDTLN4
459.79 KB
Igbt.
IGBT - Field Stop, Trench 650 V, 75 A Product Preview FGH75T65SHDTLN4 Using the novel field stop 3rd generation IGBT technology, FGH75T65SHDTLN4 off.
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