FGH75T65SQDT - IGBT

ON Semiconductor

FGH75T65SQDT Datasheet Preview — Preview of FGH75T65SQDT PDF

Datasheet Details

Part number	FGH75T65SQDT
Manufacturer	ON Semiconductor ↗
File Size	802.03 KB
Description	IGBT
Datasheet	FGH75T65SQDT-ONSemiconductor.pdf

FGH75T65SQDT Product details

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

Max Junction Temperature TJ = 175°C.
Positive Temperature Co.
efficient for Easy Parallel Operating.
High Current Capability.
Low Saturation Voltage: VCE(sat) = 1.6 V (Typ. ) @ IC = 75 A.
100% of the Parts Tested for ILM.
High Input Impedance.
Fast Switching.
Tighten Parameter Distribution.
This Device is Pb.
Free and is RoHS Compliant.

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Published: Oct 2, 2022 |