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FQD12P10TM-F085 - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.

Features

  • -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V.
  • Low gate charge ( typical 21 nC).
  • Low Crss ( typical 65 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Qualified to AEC Q101.
  • RoHS Compliant D D G S D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuo.

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Datasheet preview – FQD12P10TM-F085

Datasheet Details

Part number FQD12P10TM-F085
Manufacturer ON Semiconductor
File Size 698.59 KB
Description P-Channel MOSFET
Datasheet download datasheet FQD12P10TM-F085 Datasheet
Additional preview pages of the FQD12P10TM-F085 datasheet.

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FQD12P10TM-F085 P-Channel MOSFET FQD12P10TM-F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features • -9.4A, -100V, RDS(on) = 0.
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