FQD12P10TM-F085 - P-Channel MOSFET

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ON Semiconductor

Part number	FQD12P10TM-F085
Manufacturer	ON Semiconductor
File Size	698.59 KB
Description	P-Channel MOSFET
Datasheet	FQD12P10TM-F085 Datasheet
Additional preview pages of the FQD12P10TM-F085 datasheet.

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.

-9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V.
Low gate charge ( typical 21 nC).
Low Crss ( typical 65 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
Qualified to AEC Q101.
RoHS Compliant D D G S D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuo.

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Published: Jan 23, 2023 |