FQP17N40 datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* 16 A, 400 V RDS(on) = 270 mW (Max.) @ VGS = 10 V, ID = 8.0 A
* Low Gate Charge (Typ. 45 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested
* This D.

Description

This N−Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching perfo.

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