FQP17P06 mosfet equivalent, 60v p-channel mosfet.
* - 17 A, - 60 V, RDS(on) = 120 m (Max.) @ VGS = - 10 V, ID = - 8.5 A
* Low Gate Charge (Typ.21 nC)
* Low Crss (Typ. 80 pF)
* 100% Avalanche Tested
*.
Features
* - 17 A, - 60 V, RDS(on) = 120 m (Max.) @ VGS = - 10 V, ID = - 8.5 A
* Low Gate Charge (Typ.21 nC) .
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superi.
Image gallery
TAGS
Download (Size : 452.56KB)