FQP17P10 P-Channel MOSFET
• −16.5 A, −100 V, RDS(on) = 190 mW (Max.) at VGS = −10 V,
ID = −8.25 A
• Low Gate Charge (Typ. 30 nC)
• Low Crss (Typ. 100 pF)
• 100% Avalanche Tested
Features
• −16.5 A, −100 V, RDS(on) = 190 mW (Max.) at VGS = −10 V,
ID = −8.25 A
• Low Gate Charge (Typ. 30 nC.
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