IRF644B - N-Channel BFET MOSFET

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ON Semiconductor

Part number	IRF644B
Manufacturer	ON Semiconductor
File Size	1.11 MB
Description	N-Channel BFET MOSFET
Datasheet	IRF644B Datasheet
Additional preview pages of the IRF644B datasheet.

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology.

14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V.
Low gate charge (Typ. 47 nC).
Low Crss (Typ. 30 pF).
Fast Switching.
100% Avalanche Tested.
Improved dv/dt Capability D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage.

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Published: Jan 23, 2023 |