IRF644B mosfet equivalent, n-channel bfet mosfet.
* 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V
* Low gate charge (Typ. 47 nC)
* Low Crss (Typ. 30 pF)
* Fast Switching
* 100% Avalanche Tested
* Imp.
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switchi.
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