IRF644B Overview
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters and...
IRF644B Key Features
- 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V
- Low gate charge (Typ. 47 nC)
- Low Crss (Typ. 30 pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
