Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology.
Features
- 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V.
- Low gate charge (Typ. 47 nC).
- Low Crss (Typ. 30 pF).
- Fast Switching.
- 100% Avalanche Tested.
- Improved dv/dt Capability
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage.
IRF644B Datasheet
