IRF644B
Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Features
- 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V
- Low gate charge (Typ. 47 n C)
- Low Crss (Typ. 30 p F)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche...
