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IRF644B - N-Channel BFET MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology.

Features

  • 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V.
  • Low gate charge (Typ. 47 nC).
  • Low Crss (Typ. 30 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage.

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Datasheet Details

Part number IRF644B
Manufacturer onsemi
File Size 1.11 MB
Description N-Channel BFET MOSFET
Datasheet download datasheet IRF644B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF644B — N-Channel BFET MOSFET IRF644B N-Channel BFET MOSFET 250 V, 14 A, 280 mΩ Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. Features • 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V • Low gate charge (Typ. 47 nC) • Low Crss (Typ. 30 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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