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IRFR220B - 200V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology.

Features

  • 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V.
  • Low gate charge ( typical 12 nC).
  • Low Crss ( typical 10 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability D D ! GS D-PAK IRFR Series GDS I-PAK IRFU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain.

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Datasheet preview – IRFR220B

Datasheet Details

Part number IRFR220B
Manufacturer ON Semiconductor
File Size 536.65 KB
Description 200V N-Channel MOSFET
Datasheet download datasheet IRFR220B Datasheet
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Full PDF Text Transcription

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IRFR220B / IRFU220B IRFR220B / IRFU220B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. Features • 4.6A, 200V, RDS(on) = 0.
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